? semiconductor components industries, llc, 2012 december, 2012 ? rev. 5 1 publication order number: NTGS3443t1/d NTGS3443, nvgs3443 power mosfet 4.4 amps, 20 volts p ? channel tsop ? 6 features ? ultra low r ds(on) ? higher efficiency extending battery life ? miniature tsop ? 6 surface mount package ? these devices are pb ? free and are rohs compliant ? nvgs prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable applications ? power management in portable and battery ? powered products, i.e.: cellular and cordless telephones, and pcmcia cards maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage v dss ? 20 volts gate ? to ? source voltage ? continuous v gs 12 volts thermal resistance junction ? to ? ambient (note 1) total power dissipation @ t a = 25 c drain current ? continuous @ t a = 25 c ? pulsed drain current (t p 10 s) r ja p d i d i dm 244 0.5 ? 2.2 ? 10 c/w watts amps amps thermal resistance junction ? to ? ambient (note 2) total power dissipation @ t a = 25 c drain current ? continuous @ t a = 25 c ? pulsed drain current (t p 10 s) r ja p d i d i dm 128 1.0 ? 3.1 ? 14 c/w watts amps amps thermal resistance junction ? to ? ambient (note 3) total power dissipation @ t a = 25 c drain current ? continuous @ t a = 25 c ? pulsed drain current (t p 10 s) r ja p d i d i dm 62.5 2.0 ? 4.4 ? 20 c/w watts amps amps operating and storage temperature range t j , t stg ? 55 to 150 c maximum lead temperature for soldering purposes for 10 seconds t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. minimum fr ? 4 or g ? 10 pcb, operating to steady state. 2. mounted onto a 2 in square fr ? 4 board (1 in sq, 2 oz. cu. 0.06 thick single sided), operating to steady state. 3. mounted onto a 2 in square fr ? 4 board (1 in sq, 2 oz. cu. 0.06 thick single sided), t 5.0 seconds. 4.4 amperes 20 volts r ds(on) = 65 m 3 4 1256 device package shipping ? ordering information NTGS3443t1g tsop ? 6 (pb ? free) 3000 / tape & reel p ? channel nvgs3443t1g tsop ? 6 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. tsop ? 6 case 318g style 1 marking diagram & pin assignment 443 = specific device code m = date code* = pb ? free package source 4 drain 6 drain 5 3 gate 1 drain 2 drain (note: microdot may be in either location) 443 m *date code orientation may vary depending upon manufacturing location. http://onsemi.com 1
NTGS3443, nvgs3443 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (notes 4 & 5) characteristic symbol min typ max unit off characteristics drain ? source breakdown voltage (v gs = 0 vdc, i d = ? 10 a) v (br)dss ? 20 ? ? vdc zero gate voltage drain current (v gs = 0 vdc, v ds = ? 20 vdc, t j = 25 c) (v gs = 0 vdc, v ds = ? 20 vdc, t j = 70 c) i dss ? ? ? ? ? 1.0 ? 5.0 adc gate ? body leakage current (v gs = ? 12 vdc, v ds = 0 vdc) i gss ? ? ? 100 nadc gate ? body leakage current (v gs = +12 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics gate threshold voltage (v ds = v gs , i d = ? 250 adc) v gs(th) ? 0.60 ? 0.95 ? 1.50 vdc static drain ? source on ? state resistance (v gs = ? 4.5 vdc, i d = ? 4.4 adc) (v gs = ? 2.7 vdc, i d = ? 3.7 adc) (v gs = ? 2.5 vdc, i d = ? 3.5 adc) r ds(on) ? ? ? 0.058 0.082 0.092 0.065 0.090 0.100 forward transconductance (v ds = ? 10 vdc, i d = ? 4.4 adc) g fs ? 8.8 ? mhos dynamic characteristics input capacitance (v ds = ? 5.0 vdc, v gs = 0 vdc, f = 1.0 mhz) c iss ? 565 ? pf output capacitance c oss ? 320 ? pf reverse transfer capacitance c rss ? 120 ? pf switching characteristics turn ? on delay time (v dd = ? 20 vdc, i d = ? 1.0 adc, v gs = ? 4.5 vdc, r g = 6.0 ) t d(on) ? 10 25 ns rise time t r ? 18 45 ns turn ? off delay time t d(off) ? 30 50 ns fall time t f ? 31 50 ns total gate charge (v ds = ? 10 vdc, v gs = ? 4.5 vdc, i d = ? 4.4 adc) q tot ? 7.5 15 nc gate ? source charge q gs ? 1.4 ? nc gate ? drain charge q gd ? 2.9 ? nc body ? drain diode ratings diode forward on ? voltage (i s = ? 1.7 adc, v gs = 0 vdc) v sd ? ? 0.83 ? 1.2 vdc reverse recovery time (i s = ? 1.7 adc, di s /dt = 100 a/ s) t rr ? 30 ? ns 4. indicates pulse test: p.w. = 300 sec max, duty cycle = 2%. 5. handling precautions to protect against electrostatic discharge are mandatory.
NTGS3443, nvgs3443 http://onsemi.com 3 typical electrical characteristics figure 1. on ? region characteristics figure 2. transfer characteristics figure 3. on ? resistance vs. gate ? to ? source voltage figure 4. on ? resistance vs. drain current and gate voltage figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage 0 4 1.6 6 2 1.2 0.8 ? v ds, drain ? to ? source voltage (volts) ? i d, drain current (amps) 2 0 0.4 8 v gs = ? 5 v v gs = ? 3 v v gs = ? 2.5 v v gs = ? 4.5 v v gs = ? 3.5 v v gs = ? 2 v v gs = ? 1.5 v t j = 25 c 4 0 6 2 8 ? v gs, gate ? to ? source voltage (volts) ? i d, drain current (amps) 0.6 2.2 2.6 1.8 1.4 3 1 t j = 25 c t j = 125 c t j = ? 55 c v ds = ? 10 v 1.5 0.4 0.35 0.3 0.25 3.5 3 2.5 0.2 0.15 0.1 0.05 0 2 4 4.5 5 ? v gs, gate ? to ? source voltage (volts) r ds(on), drain ? to ? source resistance (ohms) i d = ? 4.4 a t j = 25 c 0.1 ? i d, drain current (amps) r ds(on), drain ? to ? source resistance (ohms) 045 3 26 17 0.06 0.12 0.04 0.08 0.14 0.16 8 t j = 25 c v gs = ? 2.5 v v gs = ? 4.5 v v gs = ? 2.7 v 1.5 1.4 1.2 1.3 1.1 1 0.9 t j , junction temperature ( c) r ds(on), drain ? to ? source resistance (normalized) ? 50 50 25 0 ? 25 75 125 100 i d = ? 4.4 a v gs = ? 4.5 v 0.8 0.7 150 0.01 0.1 1 10 100 ? v ds, drain ? to ? source voltage (volts) ? i dss, leakage (na) 01620 12 8 4 t j = 25 c t j = 125 c t j = 100 c v gs = 0 v v gs = ? 4 v
NTGS3443, nvgs3443 http://onsemi.com 4 typical electrical characteristics figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge 0 1200 1000 8 800 600 10 6 412 ? v ds, drain ? to ? source voltage (volts) c, capacitance (pf) 400 200 0 21420 18 16 t j = 25 c v gs = 0 v c iss c oss c rss 5 4 3 2 1 0 q g, total gate charge (nc) 045 3 26 1 78 t j = 25 c i d = ? 4.4 a v gs qt q1 q2 ? v gs, gate ? to ? source voltage (volts) ? 50 50 0.8 0 100 1.2 1 0.6 150 figure 9. gate threshold voltage variation with temperature t j, junction temperature ( c) v gs(th), gate threshold voltage (normalized) i d = ? 250 a 0.9 1.3 1.1 0.7 25 ? 25 75 125 figure 10. diode forward voltage vs. current 4 3 2 1 0 ? v sd , source ? to ? drain voltage (volts) 0.3 0.7 0.8 0.6 0.5 0.9 0.4 1 t j = 150 c t j = 25 c v gs = 0 v ? i s, source current (amps)
NTGS3443, nvgs3443 http://onsemi.com 5 typical electrical characteristics 0.01 1.00 0.10 10.00 20 16 12 8 4 0 100.00 figure 11. single pulse power time (sec) power (w) 1e ? 04 1e+00 0.01 1e+01 1e ? 01 1e ? 02 square wave pulse duration (sec) 0.1 1 1e ? 03 figure 12. normalized thermal transient impedance, junction ? to ? ambient duty cycle = 0.5 1e+02 1e+03 normalized effective transient thermal impedance 0.2 single pulse 0.1 0.05 0.02 0.01
NTGS3443, nvgs3443 http://onsemi.com 6 package dimensions tsop ? 6 case 318g ? 02 issue v style 1: pin 1. drain 2. drain 3. gate 4. source 5. drain 6. drain 23 4 5 6 d 1 e b e1 a1 a 0.05 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimensions d and e1 are determined at datum h. 5. pin one indicator must be located in the indicated zone. c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max millimeters 0.90 1.00 1.10 a1 0.01 0.06 0.10 b 0.25 0.38 0.50 c 0.10 0.18 0.26 d 2.90 3.00 3.10 e 2.50 2.75 3.00 e 0.85 0.95 1.05 l 0.20 0.40 0.60 0.25 bsc l2 ? 0 1 0 1.30 1.50 1.70 e1 e recommended note 5 l c m h l2 seating plane gauge plane detail z detail z 0.60 6x 3.20 0.95 6x 0.95 pitch dimensions: millimeters m on semiconductor and are registered trademar ks of semiconductor components industries, llc (s cillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to an y products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of th e application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products ar e not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associ ated with such unintended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action em ployer. this literature is subject to all applicable copyrig ht laws and is not fo r resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 NTGS3443t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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